npn silicon rf transistor ne46234 / 2sc4703 npn epitaxial silicon rf transistor for high - frequency low distortion amplifier 3 - pin power minimold the mark ? shows major revised points. document no. pu10339ej01v1ds (1st edition) date published may 2003 cp(k) description the ne46234 / 2sc4703 is designed for low distortion, low noise rf amplifier operating with low supply voltage (v ce = 5 v). this low distortion characteristic makes it suitable for catv, tele - communication and other use. it employs surface m ount type plastic package, power mini mold (sot - 89). features ? low distortion, low voltage: im 2 = 55 dbc typ., im 3 = 76 dbc typ. @ v ce = 5 v, i c = 50 ma, v o = 105 db ? v/75 ? ? large p tot : p tot = 1.8 w (mounted on double - sided copper - clad 16 cm 2 ? 0.7 mm ( t) ceramic substrate) ? small package : 3 - pin power mini mold package ordering information part number quantity supplying form ne46234 - az 2sc4703 25 pcs (non reel) ? 12 mm wide embossed taping ne46234 - t1 - az 2sc4703 - t1 1 kpcs/reel ? collector face the perfo ration side of the tape remark to order evaluation samples, contact your nearby sales office. the unit sample quantity is 25 pcs. absolute maximum ratings (t a = +25 ? parameter symbol ratings unit collector to base voltage v cbo 25 v collector to e mitter voltage v ceo 12 v emitter to base voltage v ebo 2.5 v collector current i c 150 ma total power dissipation p tot note 1.8 w junction temperature t j 150 ? c storage temperature t stg ? 6 5 to +150 ? c note mounted on double - sided copper - clad 16 cm 2 ? 0.7 mm (t) ceramic substrate
dat a sheet pu10339ej01v1ds 2 n e46234 / 2sc4703 electrical characteristics (t a = +25 ? parameter symbol test conditions min. typ. max. unit dc characteristics collector cut - off current i cbo v cb = 20 v, i e = 0 ma C C 1.5 ? a emitter cut - off current i eb o v eb = 2 v, i c = 0 ma C C 1.5 ? a dc current gain h fe note 1 v ce = 5 v, i c = 50 ma 50 C 250 C rf characteristics gain bandwidth product f t v c e = 5 v, i c = 50 m a C 6.0 C ghz insertion power gain (1) ? s 21e ? 2 v c e = 5 v, i c = 50 m a, f = 1 ghz 6.5 8.3 C db insertion power gain (2) ? s 21e ? 2 v c e = 10 v, i c = 20 m a, f = 1 ghz C 8.5 C db noise figure nf v c e = 5 v, i c = 50 m a, f = 1 ghz C 2.3 3.5 db collector capacitance c ob note 2 v c b = 5 v , i e = 0 ma, f = 1 mhz C 1.5 2.5 pf 2nd order intermoduration distort ion im 2 i c = 50 m a, v o = 105 db ? v/75 ? , f = 190 ? 90 mhz v c e = 5 v C 55 C dbc v c e = 10 v 63 C 3rd order intermoduration distortion im 3 i c = 50 m a, v o = 105 db ? v/75 ? , f = 2 ? 190 ? 200 mhz v c e = 5 v C 76 C dbc v c e = 10 v C 81 C notes 1. pu lse measurement: pw ? 350 ? s, duty cycle ? 2% 2. collector to base capacitance when the emitter grounded h fe classification rank sh sf se marking sh sf se h fe value 50 to 100 80 to 160 125 to 250
dat a sheet pu10339ej01v1ds 3 n e46234 / 2sc4703 typical characteristics (t a = +25 ?
dat a sheet pu10339ej01v1ds 4 n e46234 / 2sc4703 rema rk the graphs indicate nominal characteristics. s - parameters
dat a sheet pu10339ej01v1ds 5 n e46234 / 2sc4703 package dimensions 3 - pin power minimold (unit: mm)
dat a sheet pu10339ej01v1ds 6 n e46234 / 2sc4703
n e46234 / 2sc4703
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